Prof. Charles Cornet, INSA Rennes, CNRS, Institut FOTON, Rennes, France
Friday 14 October
15:15 - 16:00
III-V/Si monolithic integration, combining the good optical properties of III-V semiconductors, the cost-efficiency and robustness of the mature Si technology, is today considered as one of the most promising approach for reducing the cost, improving the device performances, and finding new functionalities in the field of photonics, energy harvesting, electronics or quantum technologies.
In this communication, a rapid overview of the Optoelectronics, Heteroepitaxy and Materials (OHM) research team facilities and activities (semiconductor lasers, non-linear photonics, perovskites and energy harvesting) at the Institut FOTON will be first presented. Then a focus will be given on the recent works of the team aiming at understanding the physical processes involved during the III-V/Si heterogeneous epitaxial growth.1–3 Unusual optoelectronic and transport properties of III-V/Si antiphase boundaries will then be described, showing both strong electron-phonon coupling and Weyl semimetal bandstructures.4–6 Finally, building on these physical properties, it will be shown how cost-efficient III-V/Si photoelectrodes can be developed with promising performances for solar hydrogen production.5,7–9